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Qorvo QPD2080D 800µm Discrete GaAs pHEMT (Pseudomorphic High-Electron-Mobility-Transistor) features a DC to 20GHz operating frequency. The QPD2080D typically provides 29.5dBm of output power at P1dB with a gain of 11.5dB and 56% power-added efficiency at 1dB compression. This performance makes the QPD2080D appropriate for high-efficiency applications.
The QPD2080D is designed using a 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The Qorvo QPD2080D GaAs pHEMT is offered in a 0.41mm x 0.54mm x 0.10mm bare die. The device features a protective overcoat layer with silicon nitride providing high environmental robustness and scratch protection.
