Qorvo QPD1425/QPD1425L GaN Transistor Evaluation Boards

Qorvo QPD1425/QPD1425L GaN Transistor Evaluation Boards demonstrate the capabilities of the 375W discrete GaN on SiC HEMTs that operate from DC to 2GHz. The QPD1425/QPD1425L GaN RF Power Transistors offer power and efficiency optimization under high drain bias operating conditions. The transistors are housed in an industry-standard air cavity package and support both pulsed and CW operation.