Qorvo QPD0007 Evaluation Board

Qorvo QPD0007 Evaluation Board is designed to evaluate the features and functionalities of single-stage unmatched QPD0007 GaN RF transistors. These RF transistors are SiC High-Electron-Mobility Transistors (HEMTs) in a DFN package that operate at DC to 5GHz frequency range. The QPD0005 RF transistors are capable of delivering P_3dB output power of 20W at +48V operation. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.