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Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier operates from 10.7GHz to 12.7GHz, delivering 42dBm of saturated output power and 16dB of large signal gain while achieving 33% power-added efficiency. The QPA1009 RF ports have DC blocking capacitors and are matched to 50Ω. The device’s RF input port is DC coupled to ground for optimum ESD performance. The QPA1009 is fabricated on a 0.15µm QGaN15 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and is 100% DC and RF tested to ensure compliance with electrical specifications.
The Qorvo QPA1009 17W Wideband GaN on SiC Power Amplifier is available in a 6.0mm x 5.0mm laminate package. The QPA1009 can support a wide range of operating conditions, including continuous wave (CW), making the device well-suited for commercial and military applications.
