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PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET

PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET is a rugged MOSFET with a -30V drain-source voltage, ±25V gate-source voltage, and 30W power dissipation @TC=25°C. This MOSFET also features -31A continuous drain current (@TC=25°C), 60°C/W thermal resistance (junction to ambient), and -55°C to 175°C junction operating temperature range. The PJQ5839E-AU is AEC-Q101 qualified, 100% UIS tested, and lead-free in compliance with EU RoHS 2.0.

Features

  • -30V drain-source voltage
  • ±25V gate-source voltage
  • 30W power dissipation (TC=25°C)
  • -31A continuous drain current
  • Reliable and rugged
  • 100% UIS tested
  • AEC-Q101 qualified
  • Lead-free in compliance with EU RoHS 2.0
  • Green molding compound as per IEC 61249 standard
  • Solderable terminals per MIL-STD-750, method 2026
  • DFN5060B-8L package

Transfer Characteristics

Performance Graph - PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET

On-Region Characteristics

Performance Graph - PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET

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PANJIT PJQ5839E-AU Dual P-Channel Enhancement Mode MOSFET