PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs

PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs are rugged and reliable MOSFETs with -30V drain-source voltage, ±25V gate-source voltage, and 3W power dissipation @T_C=25°C. These MOSFETs feature a 50°C/W junction to ambient thermal resistance, -55°C to 175°C operating temperature range, and -2.5V maximum gate-threshold voltage. The PJDx0P03E-AU MOSFETs are AEC-Q101 qualified, 100% UIS tested, and lead-free in compliance with EU RoHS 2.0.

Features

-30V drain-source voltage
±25V gate-source voltage
3W power dissipation @T_C=25°C
50°C/W junction to ambient thermal resistance
-55°C to 175°C operating temperature range
-2.5V maximum gate-threshold voltage
100% UIS tested
Reliable and rugged

AEC-Q101 qualified
TO-252AA case package
Lead-free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Solderable terminals per MIL-STD-750, Method 2026

PANJIT PJDx0P03E-AU P-Channel Enhancement Mode MOSFETs

Features

On-Region Characteristics

Typical Characteristics

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