PANJIT MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (V_CE) of 160V and a collector current (I_C) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.

Features

NPN Silicon, planar design
Collector-emitter voltage V_CE = 160V
Collector current I_C = 600mA

MMBT5551W-AU is AECQ101 qualified
Lead-free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard

Applications

Amplifiers
Switching circuits
Signal processing

Power management
Voltage regulation
Low- to medium-power electronic devices

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors

Features

Applications

Dimensions

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