PANJIT 60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.

Features

R_DS(ON), V_GS at 10V, ID at 20A<6mΩ
R_DS(ON), V_GS at 4.5V, ID at 10A<10mΩ
Low reverse transfer capacitance
AEC-Q101 qualified

DFN5060-8L package
Solderable terminals per MIL-STD-750, Method 2026
Lead-free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard

Applications

Automotive LED lighting
Wireless chargers
DC/DC converters

Specifications

60V maximum drain-source
±20V maximum gate-source
Maximum continuous drain current
- 68A at +25°C
- 43A at +100°C
272A maximum pulsed drain current at +25°C
Maximum single pulse avalanche
- 28A current
- 39mJ energy

Maximum power dissipation
- 50W at +25°C
- 20W at +100°C
-55°C to +150°C operating junction temperature range
Thermal resistance
- 2.5°C/W junction-to-case (bottom)
- 28°C/W junction-to-case (top)
- 50°C/W junction-to-ambient

PANJIT 60V N-Channel Enhancement Mode MOSFETs

Features

Applications

Specifications

Package & Mounting Pad Layout

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