onsemi Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

While IGBTs offer superior thermal performance vs. silicon solutions in these high-power applications, EliteSiC by onsemi enables both higher switching speeds and high power. onsemi offers a complete portfolio of SiC MOSFETs ranging from 650V to 1700V breakdown voltage, with RDS_ONs as low as 12mΩ. But, every SiC MOSFET requires the correct Gate Driver to maximize system efficiencies and minimize the total power losses. This easy-to-use table below pairs the correct Gate Driver to each SiC MOSFET.