onsemi NXH010P90MNF1 SiC Module

onsemi NXH010P90MNF1 SiC Module contains a 10Mohm 900V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 15V to 18V. The NXH010P90MNF1 has an improved R_DS(ON) at a higher voltage and low thermal resistance.

Features

Recommended gate voltage 15V – 18V
Improved R_DS(ON) at a higher voltage
Low thermal resistance

Improved efficiency or higher power density
Options for TIM or no TIM
Flexible solution for high-reliability thermal interface

Applications

AC-DC Conversion
Electric Vehicle Charger
DC-AC Conversion
Energy Storage System

DC-DC Conversion
Solar Inverter 3-phase
Uninterruptible Power Supply

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