onsemi NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low R_DS(ON) to minimize conduction losses and low gate charge (Q_G) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

Features

Small footprint (5mm x 6mm) for compact design
Low R_DS(ON) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses
60V drain to source voltage (V_DSS)
50A continuous drain current (I_D) @T_C = 25°C

9.2mΩ drain to source on-resistance (R_DS(on))
LFPAK4 package, industry standard
AEC-Q101 qualified and PPAP capable
Pb-free and RoHS-compliant

Applications

Reverse battery protection
Power switches (like high-side drivers, low-side drivers, and H-Bridge)
Solenoid drivers

Motor control
Load switches
Switching power supplies

onsemi NVMYS9D3N06CL Power MOSFET

Features

Applications

Package Dimensions

husseinkey ELECTRONICS®

COMPANY