onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs

onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs offer a 169A continuous drain current, 3.1mΩ at 10V R_DS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

Small footprint (5mm x 6mm) for compact design
Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses
Wettable flank product

AEC-Q101-qualified and PPAP-capable
Pb-free, Halogen-free/BFR-free, beryllium-free, and RoHS-compliant

Applications

48V systems
Switching power supplies
Reverse battery protection

Power switches (high side driver, low-side driver, H-bridges, etc)

Specifications

169A maximum continuous drain current
3.1mΩ at 10V or 3.8mΩ at 4.5V R_DS(ON) maximum
100V Drain-to-Source voltage
±20V Gate-to-Source voltage

900A pulsed drain current
-55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs

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