onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs

onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs feature a 177A continuous drain current, 2.8mΩ at 10V R_DS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

Small footprint (5mm x 6mm) for compact design
Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses

AEC-Q101-qualified and PPAP capable
Pb-free, halogen-free/BFR-free, beryllium-free, and RoHS-compliant

Applications

48V systems
Switching power supplies
Reverse battery protection

Power switches (high-side driver, low-side driver, H-bridges, etc)

Specifications

177A maximum continuous drain current
2.8mΩ at 10V or 3.8mΩ at 4.5V R_DS(ON) maximum
100V Drain-to-Source voltage
±20V Gate-to-Source voltage

900A Pulsed drain current
-55°C to +175°C Operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFWS002N10MCL Single N-Channel Power MOSFETs

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