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onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs are high-performance devices with exceptional characteristics. The onsemi NVHL075N065SC1 offers a typical RDS(on) of 57mΩ at a gate-source voltage (VGS) of 18V and 75mΩ at 15V. The device features ultra-low gate charge (QG(tot) = 61nC) and low output capacitance (Coss = 107pF), ensuring fast switching and reduced power losses.

Features

  • Typ. RDS(on) = 57m @ VGS = 18V
  • Typ. RDS(on) = 75m @ VGS = 15V
  • Ultra-low gate charge (QG(tot) = 61nC)
  • Low output capacitance (Coss = 107pF)
  • 100% avalanche tested
  • AEC-Q101 qualified and PPAP capable
  • This device is Pb-free and is RoHS-compliant

Applications

  • Automotive on-board charger
  • Automotive DC/DC converter for EV/HEV

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onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs