onsemi NVBLS1D7N10MCTXG N-Channel PowerTrench® MOSFET

onsemi NVBLS1D7N10MCTXG N-Channel PowerTrench^® MOSFET supplies a high thermal performance and low R_DS(on) to minimize conduction losses. The NVBLS1D7N10MCTXG is AEC-Q101 qualified and PPAP capable, ideal for automotive applications.

The NVBLS1D7N10MCTXG MOSFET is offered in a TOLL package with a -55°C to +175°C operating junction and storage temperature range.

Features

Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses
AEC-Q101 qualified and PPAP capable

Lowers switching noise/EMI
Pb-free and RoHS-compliant

Applications

Switching power supplies
Power switches (high side driver, low-side driver, H-bridges, etc.)
Reverse battery protection

Specifications

265A maximum continuous drain current
1.8mΩ at 10V R_DS(ON) maximum
100V drain-to-source voltage
±20V gate-to-source voltage

900A pulsed drain current
-55°C to +175°C operating junction and storage temperature range

Typical Application

onsemi NVBLS1D7N10MCTXG N-Channel PowerTrench® MOSFET

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