onsemi NVBLS1D5N10MC N-Channel PowerTrench® MOSFET

onsemi NVBLS1D5N10MC N-Channel PowerTrench^® MOSFET features high thermal performance and low R_DS(on) to minimize conduction losses. The NVBLS1D5N10MC is AEC-Q101 qualified and PPAP capable, ideal for automotive applications.

The onsemi NVBLS1D5N10MC MOSFET is available in a TOLL package with a -55°C to +175°C operating junction and storage temperature range.

Features

Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses
AEC-Q101 qualified and PPAP capable

Lowers switching noise/EMI
Pb-free and RoHS-compliant

Applications

Switching power supplies
Reverse battery protection

Power switches (high side driver, low-side driver, H-bridges, etc.)

Specifications

300A maximum continuous drain current
1.5mΩ at 10V R_DS(ON) maximum
100V drain-to-source voltage
±20V gate-to-source voltage

900A pulsed drain current
-55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVBLS1D5N10MC N-Channel PowerTrench® MOSFET

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