onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at V_GS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.

Features

D2PAK-7L package
15V to 18V gate drive range
M3S technology (64.3mΩ R_DS(ON) with low E_ON and E_OFF losses)
100% Avalanche tested

AEC-Q101 automotive qualified
Lead-free 2LI (on second-level interconnection)
Halide-free and RoHS compliant with exemption 7a

Specifications

57nC ultra-low gate charge
57pF high-speed switching with low capacitance
65mΩ typical drain-to-source ON resistance at V_GS=18V
100µA maximum zero gate voltage drain current
12s typical forward transconductance
1230pF typical input capacitance

57pF typical output capacitance
33A source current (body diode)
91mJ single pulse drain-to-source Avalanche energy
270°C maximum temperature for soldering (10s)
-55°C to 175°C operating junction temperature range
-55°C to 175°C storage temperature range

Applications

Automotive on-board chargers
Automotive DC/DC converters for EV/HEV

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET

Features

Specifications

Applications

Package Dimensions

husseinkey ELECTRONICS®

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