onsemi NTMYS003N N-Channel Power MOSFET

onsemi NTMYS003N N-Channel Power MOSFET is designed for compact and efficient designs in a 5mm x 6mm LFPAK package. This power MOSFET features low R_DS(ON), low Q_G and capacitance, 80V drain-to-source voltage, ±20V gate-to-source voltage, and -55°C to 175°C operating junction and storage temperature range. The NTMYS003N N-channel power MOSFET is Pb-free and RoHS compliant. Typical applications include MV synchronous rectifier MOSFET and motor switch.

Features

Small footprint (5mm x 6mm) for compact design
Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses

LFPAK4 package, industry standard
Pb-free
RoHS-compliant

Specifications

80V drain-to-source voltage
-55°C to 175°C operating junction and storage temperature range

±20V gate-to-source voltage
900A pulsed drain current

Applications

MV synchronous rectifier MOSFET
Motor switch

onsemi NTMYS003N N-Channel Power MOSFET

Features

Specifications

Applications

husseinkey ELECTRONICS®

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