onsemi NTMT045N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NTMT045N065SC1 Silicon Carbide (SiC) MOSFETs use technology that provides superior switching performance and higher reliability compared to Silicon. The onsemi MOSFETs feature low ON resistance and a compact chip size that ensures low capacitance and gate charge. The devices have benefits that include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • Typ. RDS(on) = 33mΩ @ VGS = 18V
  • Typ. RDS(on) = 45mΩ @ VGS = 15V
  • Ultra-low gate charge (QG(tot) = 105nC)
  • Low effective output capacitance (COSS = 162pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • RoHS compliant

Applications

  • SMPS (Switching Mode Power Supplies)
  • Solar inverters
  • UPS (Uninterruptable Power Supplies)
  • Energy storage

onsemi NTMT045N065SC1 Silicon Carbide (SiC) MOSFETs