onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs

onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs feature a low RDS(on), gate threshold, and input capacitance. The onsemi NTJD5121N/NVJD5121N MOSFETs feature a 60V drain-to-source voltage and 295A maximum continuous drain current. The NTJD5121N/NVJD5121N are AEC-Q101 qualified and PPAP capable, ideal for automotive applications.

Features

Low R_DS(on)
Low gate threshold
Low input capacitance
ESD protected gate

NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
Pb-free device

Applications

Low-side load switch
DC-DC converters (buck and boost circuits)

Specifications

295A maximum continuous drain current
1.6Ω at 10V and 2.5Ω at 4.5V R_DS(ON) maximum
60V drain-to-source voltage
±20V gate-to-source voltage

900A pulsed drain current
-55°C to +150°C operating junction and storage temperature range

Pinout

onsemi NTJD5121N/NVJD5121N Dual N-Ch Power MOSFETs

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