onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability. The MOSFET has low ON resistance and its compact chip size ensures low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

Typ. RDS(on) = 44m @ VGS = 18V
Typ. RDS(on) = 60m @ VGS = 15V
Ultra Low Gate Charge (QG(tot) = 74nC)
Low Output Capacitance (Coss = 133pF)

100% Avalanche Tested
TJ = 175°C
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

Applications

SMPS (Switching Mode Power Supplies)
Solar Inverters

UPS (Uninterruptable Power Supplies)
Energy Storages

husseinkey ELECTRONICS®

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