onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, DC-DC converters, UPS, and energy storage.

Features

High speed switching with low capacitance (C_oss=162pF)
Typical R_DS(on)=32m @ V_GS=18V
Typical R_DS(on)=42m @ V_GS=15V
650V Drain-to-Source Voltage (V_DSS)
66A Continuous Drain Current (I_Dmax)

Ultra low gate charge (Q_G(tot)=105nC)
100% avalanche tested
High junction temperature (T_J < 175°C)
Pb-free and RoHS compliant

Applications

Switching Mode Power Supplies (SMPS)
Uninterruptable Power Supplies (UPS)
DC-DC converters

Solar inverters
Energy storages

onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET

Features

Applications

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