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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET

onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family has optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.    

Features

  • Typ. RDS(on) = 14mΩ @ VGS = 18V
  • Low switching losses (Typ. EON 1308 J at 74A, 800V)
  • 100% avalanche tested
  • These devices are RoHS compliant

Applications

  • Solar inverters
  • Electric vehicle charging stations
  • UPS (Uninterruptible Power Supplies)
  • Energy storage systems
  • SMPS (Switch Mode Power Supplies)

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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET