onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET

onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG025N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Features

Typ. R_DS(on)= 19m @ V_GS = 18V
Typ. R_DS(on)= 25m @ V_GS = 15V
Ultra Low Gate Charge (Q_G(tot) = 164nC)
Low Output Capacitance (C_oss = 278pF)

100% Avalanche tested
T_J = 175°C
RoHS compliant

Applications

SMPS (Switching Mode Power Supplies)
Solar inverters

UPS (Uninterruptable Power Supplies)
Energy storage

onsemi NTBG025N065SC1 19mohm Silicon Carbide MOSFET

Features

Applications

husseinkey ELECTRONICS®

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