onsemi NDSH40120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH40120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH40120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

Features

+175°C maximum junction temperature
251mJ Avalanche rated, single pulse
High surge current capacity
Positive temperature coefficient

Ease of paralleling
No reverse/forward recovery
TO-247-2LD case
Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
40A to 46A maximum continuous rectified forward current range
Maximum forward surge current
- 1274A to 1295A non-repetitive peak range
- 195A non-repetitive
- 73A repetitive
Maximum power dissipation
- 366W at +25°C
- 61W at +150°C
1.41V to 1.9V typical forward voltage range

200µA maximum reverse current
184nC typical total capacitive charge
115pF (at 800V) to 2840pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 0.41°C/W junction-to-case
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH40120C-F155 Silicon Carbide Schottky Diode

Features

Applications

Specifications

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