onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

Features

+175°C maximum junction temperature
49mJ Avalanche-rated, single-pulse
High surge current capacity
Positive temperature coefficient
Ease of paralleling

No reverse/forward recovery
TO-247-3LD case
Halide-free and RoHS-compliant with exemption 7a, lead-free 2LI (on second level interconnection)

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
Maximum continuous rectified forward current range
- 20A to 24A per device
- 10A to 12A per leg
Maximum forward surge current
- 459A to 564A non-repetitive peak range
- 59A non-repetitive
- 31A repetitive
Maximum power dissipation
- 94W at +25°C
- 16W at +150°C

1.39V to 1.94V typical forward voltage range
200µA maximum reverse current
46nC typical total capacitive charge
32pF (at 800V) to 680pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 0.65°C/W junction-to-case per device
- 1.6°C/W junction-to-case per leg
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

Features

Applications

Specifications

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