onsemi NCV57001F IGBT Gate Driver

onsemi NCV57001F IGBT Gate Driver is a high-current single-channel IGBT driver with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. The NCV57001F IGBT gate driver accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. This gate driver provides >5kV_rms (UL1577 rating) galvanic isolation and >1200V_iorm (working voltage) capabilities. Typical applications include automotive power supplies, HEV/EV powertrain, BSG Inverter, and PTC heater.

Features

High current output (4A/-6A) at IGBT Miller Plateau voltages
Low output impedance for enhanced IGBT driving
Short propagation delays with accurate matching
Active Miller clamp to prevent spurious gate turn-on
DESAT protection with programmable delay
Typical 550ns soft turn off during IGBT short circuit
IGBT gate clamping during short circuit
IGBT gate active pull down
Tight UVLO thresholds for bias flexibility
Wide bias voltage range including negative V_EE2

3.3V to 5V input supply voltage range
5000V galvanic isolation (to meet UL1577 requirements)
1200V working voltage (per VDE0884-10 requirements)
High transient immunity
High electromagnetic immunity
Device is Pb-free, Halogen-free/BFR free, and is RoHS compliant
AEC-Q100 Qualified and PPAP capable

Applications

Automotive power supplies
HEV/EV powertrain

BSG inverter
PTC heater

onsemi NCV57001F IGBT Gate Driver

Features

Applications

Block Diagram

Simplified Application Schematics

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