onsemi NCV51561 Isolated Dual Channel Gate Driver

onsemi NCV51561 Isolated Dual-Channel Gate Driver features a 4.5A source and 9A sink peak current with short and matched propagation delays. The NCV51561 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches.

The onsemi NCV51561 Isolated Dual-Channel Gate Driver has a working voltage of up to 1500VDC provided by two 5kVRMS galvanically isolated gate driver channels. These channels allow many configurations of two low-side, two high-side switches, or a half-bridge driver with programmable dead time.

The NCV51561 delivers other important protection functions such as independent undervoltage lockout for both gate drivers and a dead time adjustment function.

Features

4.5A Peak source, 9A peak sink output current capability
Flexible dual low-side, dual high-side, or half-bridge gate driver
Independent UVLO protections for both output drivers
Output supply voltage from 6.5V to 30V with 5V and 8V for MOSFET, 13V and 17V UVLO for SiC, thresholds
Common mode transient immunity CMTI > 200V/ns
Propagation delay typical 36ns with
- 5ns Max delay matching per channel
- 5ns Max pulse-width distortion

User programmable input logic
Single or dual−input modes via ANB
ENABLE or DISABLE Mode
User programmable dead-time
AEC−Q100 Qualified for automotive application requirements
Isolation and safety
- 5kV_RMS Isolation for 1 minute (per UL1577 Requirements) and 1500V peak differential voltage between output channels
- 8000VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements)
- CQC Certification per GB4943.1−2011
- SGS FIMO Certification per IEC 62386−1
Pb-Free Devices

Applications

On-board chargers
xEV DC-DC Converters

Traction inverters
Charging stations

onsemi NCV51561 Isolated Dual Channel Gate Driver

Features

Applications

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Typical Application Circuits

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