onsemi NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers

onsemi NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The 4.5A/9.0A NCP51561 Gate Drivers offer short and matched propagation delays. Two independent and 5kV_RMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low-side, two high-side switches, or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when it is set low. The NCP51561 Gate Drivers integrate other important protection functions such as independent under-voltage lockout for gate drivers and enable functions.

The onsemi NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers are available in a SOIC-16 WB package with a wide -40°C to +150°C junction temperature range.

Features

4.5A peak source, 9A peak sink output current capability
Flexible dual low-side, dual high-side, or half-bridge gate driver
Independent UVLO protection for both output drivers
Output supply voltage from 6.5V to 30V with 5V and 8V for MOSFET, 13V and 17V UVLO for SiC, Thresholds.
Propagation delay typical 36ns with
- 5ns max delay matching per channel
- 5ns max pulse-width distortion
User programmable input logic
- Single or dual-input modes via ANB
- ENABLE or DISABLE mode

Common mode transient immunity CMTI >200V/ns
User-programmable dead-time
Isolation and Safety
- 5kV_RMS isolation for 1 minute (per UL1577 requirements) and 1500V peak differential voltage between output channels
- 8000VPK reinforced isolation voltage (per VDE0884-11 requirements)
SOIC-16 WB package
Pb-free

Applications

Motor drives
Isolated converters in DC-DC and AC-DC power supplies

Server, telecom, and industrial infrastructures
UPS and solar inverters

Videos

Infographic

Application Notes

Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs