onsemi NCD57085 & NCV57085 Isolated IGBT Gate Drivers

onsemi NCD57085 and NCV57085 Isolated IGBT (Insulated-Gate Bipolar Transistor) Gate Drivers feature 2.5kVrms internal galvanic isolation and Current Sense protection with soft turn off and fault reporting. The NCD57085 and NCV57085 are designed for high system efficiency and reliability in high-power applications. These devices accommodate a wide range of input bias voltage and signal levels from 3.3V to 20.0V and a wide range of output bias voltage up to 30V. Safety features of the NCD57085 and NCV57085 include undervoltage-lockout (UVLO) and over-current protection.

The onsemi NCD57085 and NCV57085 Isolated IGBT Gate Drivers are offered in a compact SOIC-8 package ideal for space-constrained applications. The NCV57085 variant of this device is AEC-Q100 qualified for automotive applications.

Features

High +7A/-7A peak output current
Low output impedance for enhanced IGBT driving
Short propagation delays with accurate matching
IGBT over current protection
Negative voltage down to -9V capability for CS pin
IGBT gate clamping during short circuit
IGBT gate active pull-down
Soft turn off during IGBT over current
Tight UVLO thresholds for bias flexibility

Output partial pulse avoidance during UVLO/CS (Restart)
3V, 5.0V, and 15.0V logic input
5kVrms galvanic isolation
High transient immunity
High electromagnetic immunity
NCV57085 variant AEC-Q100 Qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
Halogen-free, Pb-free, and RoHS compliant

Applications

Motor control
Automotive applications (NCV57085)
Uninterruptible Power Supplies (UPS)
Industrial power supplies

HVAC
Industrial pumps and fans
PTC heaters

Resources

Datasheet
Product Overview
Mechanical Case Outline

onsemi NCD57085 & NCV57085 Isolated IGBT Gate Drivers

Features

Applications

Resources

Block Diagram

Typical Application Circuits

Pin Designations

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