onsemi NCD57001FDWR2G Isolated IGBT Gate Driver

onsemi NCD57001FDWR2G Isolated High Current IGBT Gate Driver is a single-channel IGBT driver with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. The NCD57001FDWR2G gate driver accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. This gate driver provides >5kVrms (UL1577 rating) galvanic isolation and >1200Viorm (working voltage) capabilities. Typical applications include solar inverters, motor control, Uninterruptible Power Supplies (UPS), industrial power supplies, and welding.

Features

  • High current output (+4/-6A) at IGBT Miller Plateau voltages
  • Low output impedance for enhanced IGBT driving
  • Short propagation delays with accurate matching
  • Active Miller clamp to prevent spurious gate turn-on
  • DESAT protection with programmable delay
  • Negative voltage (down to -9V) capability for DESAT
  • Soft turn off during IGBT short circuit
  • IGBT gate clamping during short circuit
  • IGBT gate active pull down
  • Tight UVLO thresholds for bias flexibility
  • Wide bias voltage range including negative VEE2
  • 3.3V to 5V input supply voltage range
  • Designed for AEC-Q100 certification
  • 5000V galvanic isolation (to meet UL1577 requirements)
  • 1200V working voltage (per VDE0884-10 requirements)
  • High transient immunity
  • High electromagnetic immunity
  • Devices are Pb-free, Halogen free, and are RoHS compliant

Applications

  • Solar inverters
  • Motor control
  • UPS
  • Industrial power supplies
  • Welding

Block Diagram

Block Diagram - onsemi NCD57001FDWR2G Isolated IGBT Gate Driver

Simplified Application Schematics

Application Circuit Diagram - onsemi NCD57001FDWR2G Isolated IGBT Gate Driver

onsemi NCD57001FDWR2G Isolated IGBT Gate Driver