onsemi MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low V_CE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (h_FE) from 210 to 460 and a low V_CE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low V_CE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.

Features

Moisture Sensitivity Level 1 (MSL 1)
ESD protection:
- Human body model >4000V
- Machine model >400V
AEC-Q101 qualified and PPAP capable

Pb and halogen/BFR free
RoHS compliant

Specifications

High h_FE, 210 to 460
Low V_CE(sat) <0.5V
60V_DC collector-base and collector-emitter voltage
7V emitter-base voltage

150mW power dissipation
Collector current:
- 100mA_DC – continuous
- 200mA_DC – peak
150°C junction temperature

Applications

Reverse battery protection
DC-DC converter output driver

High-speed switching

onsemi MSD1819A-R General Purpose & Low VCE Transistor

Features

Specifications

Applications

Dimension Diagram

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