onsemi FGY100T120RWD IGBTs

onsemi FGY100T120RWD IGBTs combines novel field stop 7th generation IGBT technology in a TO247 3-lead package. The FGY100T120RWD features optimum performance, low conduction losses, and good switching controllability. The onsemi FGY100T120RWD IGBTs produce a high-efficiency operation in various applications, including motor control, UPS, data center, and high-power switches.

Features

Low conduction loss and optimized switching
Maximum junction temperature of T_J = +175°C
Positive temperature coefficient for easy parallel operation
High current capability

100% of the parts are dynamically tested
Short circuit rated
RoHS Compliant
TO247 3-Lead package

Applications

Motor control
UPS
General application requiring high power switch

Specifications

100A Collector current
1.4V V_CE(SAT)
1200V Collector-to-emitter voltage

5µs Short circuit withstand time
300A Pulsed collector current

Typical Application

onsemi FGY100T120RWD IGBTs

Output Characteristics

Performance Graph - onsemi FGY100T120RWD IGBTs

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