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onsemi FGH4L75T65MQDC50 Field Stop 4th Gen Mid-Speed IGBT

onsemi FGH4L75T65MQDC50 Field Stop 4th Gen Mid-Speed IGBT offers optimum performance with low conduction and switching losses. FGH4L75T65MQDC50 utilizes field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in a TO-247 4-lead package. This IGBT transistor is for high-efficiency operations in various applications, especially totem-pole bridgeless PFC and inverters.

Features

  • Positive temperature coefficient for easy parallel operation
  • High current capability
  • 100% tested for ILM
  • Smooth and optimized switching
  • Low saturation voltage: VCE(Sat) = 1.45V typical at IC = 75 A
  • No reverse recovery / no forward recovery
  • Tight parameter distribution
  • RoHS-compliant

Applications

  • Solar inverters
  • UPS (Uninterrupted Power Supplies)
  • Energy storage systems
  • PFC (Power Factor Correction)
  • EV (Electric Vehicle) charging stations

Specifications

  • 650V maximum collector-to-emitter voltage
  • ±20V maximum gate-to-emitter voltage
  • ±30V maximum transient gate-to-emitter voltage
  • 75A to 110A maximum collector current range
  • 192W to 385W maximum power dissipation range
  • 300A maximum pulsed current collector
  • 50A to 60A maximum diode forward current range
  • 200A maximum pulsed diode forward current
  • -55°C to +175°C operating temperature range
  • TO-247-4LD package

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onsemi FGH4L75T65MQDC50 Field Stop 4th Gen Mid-Speed IGBT