onsemi FGH4L40T120LQD IGBT

onsemi FGH4L40T120LQD IGBT is a robust Ultra Field Stop Trench construction that provides superior performance in demanding switching applications. This IGBT is incorporated into the device which is a soft and fast co-packaged free-wheeling diode with a low forward voltage. The FGH4L40T120LQD IGBT offers both low on-state voltage and minimal switching loss. This IGBT operates at 175°C maximum junction temperature. The FGH4L40T120LQD IGBT operates at 1200V, 40A, and is built in a TO247 4L package. Typical applications include solar inverters and UPS, industrial switching, and welding.

Features

  • Extremely efficient trench with field stop technology
  • 175°C maximum junction temperature (TJ)
  • Fast and soft reverse recovery diode
  • Optimized for Low VCE(Sat)
  • 1200V maximum Collector-Emitter Voltage (VCE)

Applications

  • Solar inverter and UPS
  • Industrial switching
  • Welding

Pin Connection

onsemi FGH4L40T120LQD IGBT

Gate Charge Characteristics

Performance Graph - onsemi FGH4L40T120LQD IGBT

onsemi FGH4L40T120LQD IGBT