NXP Semiconductors A5M36TG140-TC Airfast Power Amplifier Module

NXP Semiconductors A5M36TG140-TC Airfast Power Amplifier Module is a fully integrated Doherty amplifier module that operates from 3400MHz to 3800MHz carrier center frequency range. This power amplifier module is designed for wireless infrastructure applications that demand high performance in a small footprint. The A5M36TG140-TCT1 includes a thermal path separated from the electrical/solder connection path for enhanced thermal dissipation. This amplifier module features an 11.3mA maximum forward gate current, 31dB gain, 10W average power output, 225°C maximum channel temperature, and 125°C case operating temperature. The A5M36TG140-TCT1 power amplifier module is ideal for low-power remote radio heads, small outdoor cells, and massive MIMO systems.

Features

2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
Thermal path is separated from the electrical/solder connection path for enhanced thermal dissipation
Designed for low-complexity digital linearization systems

Fully matched (50Ω input/output, DC blocked)
Reduced memory effects for improved linearized error vector magnitude
14mm x 10mm dimension

Applications

Low-power remote radio heads
Massive MIMO systems
Small outdoor cells

Specifications

3410MHz carrier center frequency:
- 31dB gain
- -27.7dBc ACPR
- 42.9% PAE
3600MHz carrier center frequency:
- 31.2dB gain
- -28.2dBc ACPR
- 46.9% PAE
3790MHz carrier center frequency:
- 31dB gain
- -31.7dBc ACPR
- 45.4% PAE

10W average power output
11.3mA maximum forward gate current
225°C maximum channel temperature
125°C case operating temperature
Operating voltage range:
- 4.75V_DC to 5.25V_DC (V_DD1)
- 38V_DC to 55V_DC (V_DD2)

NXP Semiconductors A5M36TG140-TC Airfast Power Amplifier Module

Features

Applications

Specifications

Videos

Functional Electrical Routing Diagram

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