NXP Semiconductors A5M34TG140-TC Airfast Power Amplifier Module

NXP Semiconductors A5M34TG140-TC Airfast Power Amplifier Module is designed for wireless infrastructure applications that demand high performance in a small footprint. This fully integrated Doherty amplifier module features a 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. The A5M34TG140-TC amplifier module offers reduced memory effects for improved linearized error vector magnitude. This power amplifier module features a 3300MHz to 3670MHz carrier center frequency range, 225°C maximum channel temperature, 31dB gain, and 10.7W average power output. The A5M34TG140−TC amplifier module is ideal for applications in massive MIMO systems, outdoor small cells, and low-power remote radio heads.

Features

2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
Designed for low-complexity digital linearization systems
Thermal path separated from the electrical/solder connection path for enhanced thermal dissipation

Fully matched (50Ω input/output, DC blocked)
Advanced high-performance in-package Doherty
Reduced memory effects for improved linearized error vector magnitude
14mm x 10mm dimensionons

Applications

Massive MIMO systems
Outdoor small cells
Low-power remote radio heads

Specifications

3310MHz carrier center frequency:
- 31.2dB gain
- -30.7dBc ACPR
- 42.1% PAE
3500MHz carrier center frequency:
- 31dB gain
- -30.8dBc ACPR
- 46% PAE
3660MHz carrier center frequency:
30.7dB gain
-31.4dBc ACPR
48% PAE

125°C case operating temperature
Operating voltage range:
- 4.75V_DC to 5.25V_DC (V_DD1)
- 38V_DC to 55V_DC (V_DD2)
225°C maximum channel temperature
10.7W average power output
28dBm peak input power

NXP Semiconductors A5M34TG140-TC Airfast Power Amplifier Module

Features

Applications

Specifications

Functional Electrical Routing Diagram

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