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Nexperia PXP010-20QX P-Channel Trench MOSFET

Nexperia PXP010-20QX P-Channel Trench MOSFET is a -20V VDS, P-channel enhancement mode Field-Effect Transistor (FET). This P-Channel Trench MOSFET comes in an MLPAK33 (SOT8002) Surface Mounted Device (SMD) plastic package. The PXP010-20QX MOSFET features a low threshold voltage, Trench MOSFET technology, a -55°C to 150°C operating temperature range, and a -17.1A drain current. Typical applications include a high-side load switch, battery management, DC-to-DC conversion, and switching circuits.

Features

  • Low threshold voltage
  • Trench MOSFET technology
  • MLPAK33 package (3.3mm x 3.3mm footprint)

Specifications

  • -20V VDS drain-source voltage
  • -17.1A ID drain current
  • 4.3W Power Dissipation (PD)
  • -55°C (Minimum) to 150°C (Maximum) operating temperature range

Applications

  • High-side load switch
  • Battery management
  • DC-to-DC conversion
  • Switching circuits

Dimension Diagram

Mechanical Drawing - Nexperia PXP010-20QX P-Channel Trench MOSFET

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Nexperia PXP010-20QX P-Channel Trench MOSFET