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Nexperia PSMN071-100NSE N-Channel ASFET

Nexperia PSMN071-100NSE N-Channel ASFET is designed for relay replacement, inrush management, and battery management applications. This ASFET includes an enhanced Safe Operating Area (SOA) for superior linear mode operation. The PSMN071-100NSE N-channel ASFET provides a low drain-source on-state resistance for low I2R conduction losses. This ASFET features a 100V maximum drain-source voltage, 9.8A maximum drain current, 31W maximum total power dissipation, and 175°C maximum junction temperature. The PSMN071-100NSE N-channel ASFET comes with enhanced SOA in a compact 2mm x 2mm DFN2020 package. In addition to those mentioned, other notable applications include IEEE802.3at and proprietary PoE solutions, WIFI® hotspots, 5G picocells, and CCTV.

Features

  • Enhanced Safe Operating Area (SOA) for superior linear mode operation
  • Low drain-source on-state resistance for low I2R conduction losses
  • 2mm x 2mm space-saving DFN2020 package
  • Very low drain leakage current
  • EU/CN RoHS-compliant

Specifications

  • 100V maximum drain-source voltage
  • 9.8A maximum drain current
  • 31W maximum total power dissipation
  • 8A maximum non-repetitive avalanche current
  • 175°C maximum junction temperature
  • 260°C peak soldering temperature

Applications

  • IEEE802.3at and proprietary PoE solutions
  • Inrush management
  • eFuse applications
  • Battery management applications
  • Relay replacement
  • WIFI® hotspots
  • 5G picocells
  • CCTV

Package Outline

Mechanical Drawing - Nexperia PSMN071-100NSE N-Channel ASFET

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Nexperia PSMN071-100NSE N-Channel ASFET