Nexperia PSC1065H SiC Schottky Diode

Nexperia PSC1065H Silicon Carbide (SiC) Schottky Diode combines ultra-high performance and high efficiency with low energy loss in power conversion applications. This diode, housed within a Real-2-Pin (R2P) TO-252-2 Surface-Mounted Device (SMD) power plastic package, delivers cutting-edge performance features. Notably, temperature-independent capacitive turn-off, zero recovery switching behavior, and outstanding figure-of-merit (Q_C x V_F). The PSC1065H SiC Schottky diode boasts system miniaturization, high I_FSM capability, high power density, reduced system cost, and reduced EMI. This diode features 650V maximum repetitive peak reverse voltage and 10A maximum forward current. Typical applications include AC-to-DC and DC-to-DC converters, battery charging infrastructure, server and telecom power supply, Uninterruptible Power Supply (UPS), and photovoltaic inverters.