Nexperia BSS138AK N-Channel Trench MOSFETs

Nexperia BSS138AK N-Channel Trench MOSFETs are enhancement mode Field-Effect Transistors (FETs) in small surface mount packages. These devices utilize Trench MOSFET technology and are logic-level compatible. The AEC-Q101-qualified BSS138AK MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuit applications.

Features

Logic-level compatible
Extended temperature range up to +175°C
Trench MOSFET technology

Electrostatic Discharge (ESD) protection
AEC-Q101 qualified
RoHS compliant

Applications

Relay drivers
High-speed line drivers

Low-side load switches
Switching circuits

Specifications

60V maximum drain-source voltage
±20V gate-source voltage
220mA or 250mA maximum drain current
3Ω maximum drain-source on-state resistance, 2.2Ω typical
270mW to 1.6W maximum total power dissipation range
6.6mJ maximum non-repetitive drain-source avalanche energy
500V maximum HBM ESD rating

-55°C to +175°C junction/ambient temperature range
Plastic SMD package options
- 2.9mm x 1.3mm x 1mm, 1.9mm pitch, 3-terminal SOT23
- 2.1mm x 1.25mm x 0.95mm, 0.65mm pitch, 6-lead SOT363
- 2mm x 1.25mm x 0.95mm, 1.3mm pitch, 3-lead SOT323 (SC-70)

Datasheets

BSS138AK-Q
BSS138AKS-Q Dual N-Channel
BSS138AKS-Q

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