Navitas Semiconductor GaNFast™ Power ICs

Navitas Semiconductor GaNFast™ Power ICs are easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks. The components feature an integrated gate drive, wide-range V_CC and PWM inputs, internal 2kV ESD protection, and a large thermal cooling pad. Monolithically integrating the driver and power stages achieves high switching frequencies while keeping the signal clean and eliminating any unwanted noise affecting the device’s control and reliability. The GaNFast Power ICs enable high-frequency operation with ease of use, design flexibility, and compatibility with popular topologies and controllers.

Features

Enables 6x higher switching frequency, reduction of external components, and 3x smaller passives compared to a discrete GaN solution
800V peak capability
Monolithically-integrated gate drive
Zero reverse recovery charge
Programmable turn-on dV/dt
Clean switching
Safe, robust, and reliable performance
Wide logic input range with hysteresis

Under-voltage lockout (UVLO)
No turn-off loss
Eliminates gate overshoot/undershoot
20-year limited warranty
Available packages
- PQFN-5×6-8
- PQFN-6×8-30
Thermally enhanced versions available
Lead-free, RoHS and REACH compliant

Applications

Fast chargers
Consumer
Enterprise

Solar
EV

Specifications

650V continuous voltage
800V transient voltage
5.5V to 24V supply voltage range
2MHz operation
70mΩ to 300mΩ resistance range
6ns to 10ns rise time range

3ns to 5ns fall time range
11ns to 15ns maximum propagation delay range
200V/ns dV/dt immunity
-40°C to +125°C operating temperature range
7 or 30 pins

Navitas Semiconductor GaNFast™ Power ICs

Features

Applications

Specifications

Characteristics Diagram

husseinkey ELECTRONICS®

COMPANY