Mini-Circuits TAV1 Transistors

Mini-Circuits TAV1-331NM+ and TAV1-541NM+ Transistors are designed with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package. The transistors feature a low noise figure, a high gain, and a high output IP3, which makes them ideal for sensitive receivers in communications systems. Mini-Circuits TAV1-331NM+ and TAV1-541NM+ Transistors provide a non-ferrous package leadframe that is non-magnetic for use in MRI and other magnetic-sensitive applications. The transistors are also utilized in 5G MIMO radio systems, Wi-Fi® 6, tactical radio, and orthogonal frequency-division multiplexing (OFDM) applications.

Features

TAV1-331NM+
- Non-ferrous material
- Low noise figure
- High gain
- High output IP3
- Low current
- External biasing and matching required
- Replacement for Broadcom ATF-331M4

TAV1-541NM+
- Non-ferrous package lead frame
- Low noise figure
- High gain
- High output IP3
- Single supply voltage
- Wide bandwidth

Applications

MRI
ISM
5G MIMO radio systems

Wi-Fi 6
Tactical radio
OFDM (TAV1-331NM+ only)

Specifications

TAV1-331NM+
- 10MHz to 4000MHz frequency range
- 0.5dB to 1dB typical noise figure range
- 24.7dB to 12.3dB typical gain
- 19.7dBm to 21.5dBm typical output power at 1dB compression
- 50dB to 22dB typical isolation
- 6.1dB to 16.5dB typical output return loss
- 400mW total power dissipation
- -40°C to +85°C operating temperature range
- -65°C to +150°C storage temperature range

TAV1-541NM+
- 45MHz to 6000MHz frequency range
- 0.5dB to 1.7dB typical noise figure
- 24.1dB to 8.9dB typical gain
- 20.3dBm to 20.8dBm typical output power at 1dB compression
- 27.8dB to 21.8dB typical isolation
- 9.8dB to 15.3dB typical output return loss
- 360mW total power dissipation
- -40°C to +85°C operating temperature range
- -65°C to +150°C storage temperature range

Mini-Circuits TAV1 Transistors

Features

Applications

Specifications

Videos

Functional Diagram

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