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Microchip Technology MSCDR90A160BL1NG Baseless Si Diode Power Module

Microchip Technology MSCDR90A160BL1NG Baseless Si Diode Power Module features high blocking voltage, very low stray inductance, ultra-low weight, and low junction to case thermal resistance. This diode power module operates at 1.3V forward voltage (VF) at 90A, 1.6kV reverse voltage (VR), and 1600V maximum repetitive reverse voltage (VRRM).

Features

  • High blocking voltage
  • Very low stray inductance
  • Ultra-low weight
  • Ultra-low profile
  • Direct mounting to the heatsink (isolated baseless package)
  • Low junction to case thermal resistance
  • RoHS compliant

Specifications

  • 1.3V forward voltage (VF) at 90A
  • 1.6kV reverse voltage (VR)
  • 1600V maximum repetitive reverse voltage (VRRM)
  • Phase lag configuration

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Microchip Technology MSCDR90A160BL1NG Baseless Si Diode Power Module