Lite-On LTE-L201E-01 Pulsed Laser Diode

Lite-On LTE-L201E-01 Pulsed Laser Diode is a nano-stacked device in a TO-56 package with a 905nm laser wavelength. Operating in a -40°C to +85°C temperature range, the LTE-L201E-01 features a 200µm x 10µm laser aperture, a 15V maximum operating voltage (13V typical), and a 40A maximum operating current. The device is suited for short laser pulses from 1ns to 100ns. Applications include electronic equipment, equipment illumination, laser range finder/speed measurement, long-range 3D sensing, IR night illumination, motion detection, and CCTV surveillance.

Features

Peak power
- 75W at 30A operating current
- 95W at 40A operating current
905nm laser wavelength

Suited for short laser pulses from 1ns to 100ns
200µm x 10µm laser aperture
TO56 package

Applications

Electronic equipment
Equipment illumination
Laser range finder and speed measurement

Long-range 3D sensing
IR night illumination, motion detection, and CCTV surveillance

Specifications

110W maximum peak output power
40A maximum operating current
0.1% duty cycle
5V maximum reverse voltage
0.5A typical threshold current
15V maximum operating voltage, 13V typical
895nm to 915nm peak wavelength range
0.25nm/K typical peak wavelength temperature coefficient

38K/W typical junction-to-solder point thermal resistance
Beam divergence
- 10° parallel to pn-Junction
- 25° perpendicular to pn-Junction
-40°C to +85°C operating temperature range
+260°C maximum soldering temperature for 10s

Lite-On LTE-L201E-01 Pulsed Laser Diode

Features

Applications

Specifications

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