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IXYS IX4352NE 9A Low Side SiC MOSFET and IGBT Drivers are gate drivers designed to drive SiC MOSFETs and high-power IGBTs. IXYS IX4352NE Gate Drivers feature separate 9A source and sink outputs, allowing tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Desaturation detection circuitry senses a SiC MOSFET over-current condition and initiates a soft turn-off, preventing a potentially damaging dV/dt event. The IN non-inverting logic input is TTL- and CMOS-compatible, and internal level shifters provide the necessary bias to accommodate negative gate drive bias voltages. IX4352NE protection features also include UVLO detection and thermal shutdown. An open drain FAULT output signals a fault condition to the microcontroller. IXYS IX4352NE comes in a thermally enhanced 16-pin narrow SOIC package.
