IXYS IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.

Features

1-channel
N-channel enhancement-mode
Avalanche rated
200V drain-source breakdown voltage
Continuous drain current
- 86A (IXTA86N20X4 and IXTP86N20X4)
- 94A (IXTA94N20X4 and IXTP94N20X4)

R_DS(on) drain-source resistance
- 10.6mΩ (IXTA94N20X4 and IXTP94N20X4)
- 13mΩ (IXTA86N20X4 and IXTP86N20X4)
Package
- TO-220 (IXTP86N20X4, IXTP94N20X4, and 747-IXTP120N20X4)
- TO-263 (IXTA86N20X4 and IXTA94N20X4)
- TO-247 (747-IXTH120N20X4)

Schematic

Schematic - IXYS IX4 Ultra-Junction Power MOSFETs

husseinkey ELECTRONICS®

COMPANY