- support@husseinkey.com
- livechat
ISSI LPDDR4 and LPDDR4X SDRAM are low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities. The low-voltage cores and I/O power requirements of these devices make them ideal for mobile applications. The LPDDR4 and LPDDR4X SDRAM offer a clock frequency range from 1333MHz to 1600MHz and data rates up to 3200Mbps per I/O. These devices are configured with eight internal banks per channel for concurrent operation. Both the LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and “on-the-fly” burst lengths.
The ISSI LPDDR4 and LPDDR4X SDRAM use a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is a 16n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. These devices offer fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.
