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Infineon Technologies TRENCHSTOP™ IGBT7 S7

Infineon Technologies TRENCHSTOP™ IGBT7 S7 offers an extensive 1200V portfolio for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 S7 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturation voltage than others.

The Infineon TRENCHSTOP IGBT7 S7 is available with very soft full-rated EC7 (emitter-controlled) diodes, allowing a significantly reduced IGBT saturation VCEsat and low Qrr. The IGBT7 delivers superior controllability and short-circuit ruggedness. Additionally, the device features excellent electrical performance, higher controllability, an easy EMI design, and higher reliability in harsh application conditions.

Features

  • Short-Circuit Withstand Time (SCWT) of 8µs
  • High power density
  • Full current, soft, and low Qrr diode
  • High system reliability
  • Superior controllability
  • Improved high-voltage humidity ruggedness (HV-H3TRB test passed)
  • Faster, full-rated co-packed EC7 diode, more efficient and softer than Rapid 1 diode

Applications

  • Motor drives
  • UPS/PV
  • Air conditioner PFC

Specifications

  • Higher breakdown voltage of 1200V
  • Low IGBT saturation (VCEsat) and low diode forward (VF) voltage

Features & Benefits

Infineon Technologies TRENCHSTOP™ IGBT7 S7

IGBT7 Comparasion Chart

Chart - Infineon Technologies TRENCHSTOP™ IGBT7 S7

Superior Option for All Industrial Applications

Infineon Technologies TRENCHSTOP™ IGBT7 S7

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Infineon Technologies TRENCHSTOP™ IGBT7 S7