Infineon Technologies S27KS064x & S27KL064x HYPERRAM™ 2.0 Memory

Infineon Technologies S27KS064x and S27KL064x HYPERRAM™ 2.0 Memory are high-speed and low-pin-count DRAMs for high-performance embedded systems requiring expansion memory. These devices offer HYPERBUS™ and Octal SPI interfaces that draw upon the legacy features of both parallel and serial interface memories. These DRAMs operate at a voltage range of 1.8V to 3V and offer a bandwidth of up to 400MBps throughput. This makes HYPERRAM™ 2.0 the ideal expansion memory for controllers with limited onboard RAM. The HYPERRAM™ 2.0 when used as scratch-pad memory allows the read and write operations to enable fast delivery of high-resolution graphics. Typical applications include automotive instrument clusters, industrial Human Machine Interface (HMI), industrial machine vision, and display systems for consumer electronics.

The Infineon Technologies S27KS064x and S27KL064x HYPERRAM™ 2.0 DRAMs are offered in a fortified Ball Grid Array (BGA) package.

Features

Technology: 38nm DRAM
HYPERBUS interface
8V to 3.0V interface support
- Single-ended clock (CK) – 11 bus signals
- Optional differential clock (CK, CK#) – 12 bus signals
Chip Select (CS#)
8-bit data bus (DQ[7:0])
Hardware reset (RESET#)
Bidirectional Read-Write Data Strobe (RWDS)
- Output at the start of all transactions to indicate refresh latency
- Output during read transactions as Read Data Strobe
- Input during write transactions as Write Data Mask
Optional DDR Center-Aligned Read Strobe (DCARS)
- During read transactions RWDS is offset by a second clock, phase-shifted from CK
- The Phase Shifted Clock is used to move the RWDS transition-edge within the read data eye
200MHz maximum clock rate
DDR – transfers data on both edges of the clock
Data throughput up to 400MBps (3200Mbps)

Configurable Burst Characteristics
- Linear burst
Wrapped burst lengths
- 16 bytes (eight clocks)
- 32 bytes (16 clocks)
- 64 bytes (32 clocks)
- 128 bytes (64 clocks)
Hybrid option – one wrapped burst followed by linear burst
Configurable output drive strength
Power Modes
- Hybrid Sleep Mode
- Deep Power Down
Array Refresh
- Partial Memory Array (1/8, 1/4, 1/2)
- Full
Operating Temperature Range
- Industrial (I): -40°C to +85°C
- Industrial Plus (V): -40°C to +105°C
- Automotive, AEC-Q100 Grade 3: -40°C to +85°C
- Automotive, AEC-Q100 Grade 2: -40°C to +105°C
6.0mm x 8.0mm x 1.0mm FBGA24 package

Applications

Automotive instrument clusters
Display systems for consumer electronics

Consumer and industrial HMI
Industrial machine vision

Infineon Technologies S27KS064x & S27KL064x HYPERRAM™ 2.0 Memory

Features

Applications

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